Datasheet Summary
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N-channel 30 V, 0.015 Ω , 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET
Features
Type STL9N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 9 A (1)
1. The value is rated according Rthj-pcb
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- RDS(on)
- Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses
PowerFLAT™(3.3x3.3) (Chip scale package)
Applications
- Switching applications
Figure 1.
Internal schematic diagram
Description
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)- Qg, in this chip scale package, makes this device...