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STL9N3LLH5 - Power MOSFET

General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Key Features

  • Type STL9N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 9 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™(3.3x3.3) (Chip scale package).

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www.DataSheet4U.com STL9N3LLH5 N-channel 30 V, 0.015 Ω , 9 A, PowerFLAT™ (3.3x3.3) STripFET™ V Power MOSFET Features Type STL9N3LLH5 VDSS 30 V RDS(on) max < 0.019 Ω ID 9 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses PowerFLAT™(3.3x3.3) (Chip scale package) Applications ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.