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N-CHANNEL 300V - 1.8Ω - 4A - TO-220/TO-220FP PowerMesh™ MOSFET
TYPE STP4NB30 STP4NB30FP
s s s s s
STP4NB30 STP4NB30FP
VDSS 300 V 300 V
RDS(on) <2Ω <2Ω
ID 4A 4A
TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220
3 1 2
3 1 2
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STP4NB30 Datasheet
