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STP4NB30FP - N-CHANNEL MOSFET

This page provides the datasheet information for the STP4NB30FP, a member of the STP4NB30 N-CHANNEL MOSFET family.

Datasheet Summary

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet preview – STP4NB30FP

Datasheet Details

Part number STP4NB30FP
Manufacturer STMicroelectronics
File Size 331.83 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STP4NB30FP Datasheet
Additional preview pages of the STP4NB30FP datasheet.

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Full PDF Text Transcription

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N-CHANNEL 300V - 1.8Ω - 4A - TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP4NB30 STP4NB30FP s s s s s STP4NB30 STP4NB30FP VDSS 300 V 300 V RDS(on) <2Ω <2Ω ID 4A 4A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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