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STP4NB30FP - N-CHANNEL MOSFET

Download the STP4NB30FP datasheet PDF. This datasheet also covers the STP4NB30 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Note: The manufacturer provides a single datasheet file (STP4NB30_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STP4NB30FP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STP4NB30FP. For precise diagrams, and layout, please refer to the original PDF.

N-CHANNEL 300V - 1.8Ω - 4A - TO-220/TO-220FP PowerMesh™ MOSFET TYPE STP4NB30 STP4NB30FP s s s s s STP4NB30 STP4NB30FP VDSS 300 V 300 V RDS(on) <2Ω <2Ω ID 4A 4A TYPICAL RD...

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P4NB30 STP4NB30FP VDSS 300 V 300 V RDS(on) <2Ω <2Ω ID 4A 4A TYPICAL RDS(on) = 1.8 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

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