STP4NB50 Datasheet | STMicroelectronics

STP4NB50 STP4NB50FP N-CHANNEL 500V - 2.5Ω - 3.8A - TO-220/TO-220FP Power Mesh™ MOSFET PRELIMINARY DATA TYPE STP4NB50 STP4NB50FP s s s s s VDSS 500 V 500 V RDS(on) < 2.8 Ω < 2.8 Ω ID 3.8 A 2.5 A TYPICAL RDS(on) = 2.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-220 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s TO-220FP INTERNAL SCHEMATIC...