STP80N03L-06 is N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR manufactured by STMicroelectronics.
| Part Number | Description |
|---|---|
| STP80N05-09 | N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
| STP80N06-10 | N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
| STP80N20M5 | Power MOSFET |
| STP80NE06-10 | N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STP80NF03L-04 | N-CHANNEL POWER MOSFET |
Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 15 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance V GS = V GS = V GS = V GS = Test Conditions ID = 250 µ A T c = 100o C T c = 100 o C 80 0.006 Min. Unit S pF pF pF 2/5 STP80N03L-06 (continued)...
