STP80N06-10 datasheet by STMicroelectronics.
| Part number | STP80N06-10 |
|---|---|
| Datasheet | STP80N06-10_STMicroelectronics.pdf |
| File Size | 77.17 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = VGS Static Drain-source On Resistance Test Conditions ID = 250 µ A T c = 100o C 80 Min. Unit S pF pF pF 2/5 STP80N06-10 (continued) SWITCHING ON Symbol t d(on) tr (di/dt) on...
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