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STP80NE06-10 - N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

General Description

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.

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STP80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST P80NE06-10 s s s s V DSS 60 V R DS(on) <0.01 Ω ID 80 A TYPICAL RDS(on) = 0.0085 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION 2 3 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.