STP80N05-09 datasheet by STMicroelectronics.
| Part number | STP80N05-09 |
|---|---|
| Datasheet | STP80N05-09_STMicroelectronics.pdf |
| File Size | 114.77 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero G ate Voltage VDS = Max Rating Drain Current (VG S = 0) VDS = Max Rating Gate-body Leak age Current (VDS = 0) VG S = ± 20 V Tc = 125 oC ON (∗) Symbol VGS( th) RDS( on) I D(on) Parameter Gate Threshold Voltage VDS = V GS Static Drai n-s ource On Resistance Test Conditions ID = 250 µA VG S = 10V I D = 40 A 80 Min. 4 0.009 Unit V Ω A On State Drai n Current VDS > I D(on) x R DS(on)max VG S = 10 V...
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