Datasheet4U Logo Datasheet4U.com

STP85NF3LL - N - CHANNEL POWER MOSFET

General Description

This application specific Power MOSFET is the third genaration of STMicroelectronics unique “ Single Feature Size” strip-based process.

The resulting transistor shows the best trade-off between on-resistance and gate charge.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STP85NF55L N-Channel 60V MOSFET VBsemi
STP85N15F4 Power MOSFET STMicroelectronics
STP85N3LH5 N-channel Power MOSFET STMicroelectronics
STP80L60 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop
STP80N10F7 N-Channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STP85NF55 N-CHANNEL POWER MOSFET
STP85NF55L N-CHANNEL POWER MOSFET
STP80N03L-06 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STP80N05-09 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
STP80N06-10 N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-CHANNEL 30V - 0.006Ω - 85A TO-220/I2PAK LOW GATE CHARGE STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP85NF3LL STB85NF3LL-1 s s s s STP85NF3LL STB85NF3LL-1 VDSS 30 V 30 V RDS(on) < 0.008 Ω < 0.008 Ω ID 85 A 85 A TYPICAL RDS(on) = 0.0075 Ω (@4.5V) OPTIMAL RDS(ON) x Qg TRADE-OFF @4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED 1 3 2 3 12 I2PAK DESCRIPTION This application specific Power MOSFET is the third genaration of STMicroelectronics unique “ Single Feature Size” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses.