STW25NM50N Datasheet | STMicroelectronics

STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N STB25NM50N s s s Figure 1: Package ID 22 A 22 A(- ) 22 A 22 A 22 A RDS(on) 0.140 0.140 0.140 0.140 0.140 Ω Ω Ω Ω Ω VDSS (@Tj MAX) 550V 550V 550V 550V 550V 3 1 2 3 12 TO-220 3 1 I²PAK s HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-247 D²PAK 3 2 1 3 1 2 DESCRIPTION The STP25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET associates a new vertical structure to the pany's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters TO-220FP Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. Table 2: Order Codes SALES TYPE STP25NM50N STF25NM50N STB25NM50N-1 STW25NM50N STB25NM50N MARKING P25NM50N F25NM50N B25NM50N W25NM50N B25NM50N PACKAGE TO-220 TO-220FP I²PAK TO-247 D²PAK PACKAGING TUBE TUBE TUBE TUBE TAPE & REEL Rev. 8 September 2005 1/16 STP25NM50N - STF25NM50N -...