Datasheet Details
| Part number | STY60NA20 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 35.47 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY60NA20_STMicroelectronics.pdf |
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Overview: ® STY60NA20 N - CHANNEL 200V - 0.030Ω - 60 A - Max247 FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STY60NA20 s s V DSS 200 V R DS(on) < 0.032 Ω ID 60 A s s s s s s TYPICAL RDS(on) = 0.
| Part number | STY60NA20 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 35.47 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY60NA20_STMicroelectronics.pdf |
|
|
|
T he Max247 package is a new high volume power package exibiting the same footprint as the industr y standard T O-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as T O-264.
The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 oC Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor T stg Tj St orage Temperature Max.
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