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N-CHANNEL 200V - 0.022Ω - 100A Max247 MESH OVERLAY™ Power MOSFET
TYPE STY100NS20FD
n n n n n n n
STY100NS20FD
VDSS 200V
RDS(on) < 0.024Ω
ID 100 A
TYPICAL RDS(on) = 0.022Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED ± 20V GATE TO SOURCE VOLTAGE RATING LOW INTRINSIC CAPACITANCE FAST BODY-DRAIN DIODE:LOW trr, Qrr
2 1
3
Max247
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STY100NS20FD Datasheet
