Datasheet Details
| Part number | STY25NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 82.77 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY25NA60_STMicroelectronics.pdf |
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Overview: ® STY25NA60 N - CHANNEL 600V - 0.225Ω - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET TYPE STY25NA60 s s V DSS 600 V R DS(on) < 0.24 Ω ID 25 A s s s s s TYPICAL RDS(on) = 0.
| Part number | STY25NA60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 82.77 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY25NA60_STMicroelectronics.pdf |
|
|
|
The Max247™ package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264.The increased die capacity makes the device idealto reduce component count in multiple paralleled designs and save board space with respect to larger packages.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE s Max247™ INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID ID I DM ( • ) P tot T s tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating F actor Storage Temperature Max.
O perating Junction Temperature o o Value 600 600 ± 30 25 16.5 100 300 2.4 -55 to 150 150 Un it V V V A A A W W /o C o o C C (•) Pulse width limited by safe operating area March 1999 1/8 STY25NA60 THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-Heatsink with Conductive Grease Max Max Typ 0.42 40 0.05 o o C/W C/W o C/W AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy o (starting Tj = 25 C, I D = IAR , VDD = 50 V) Max Valu e 25 3000 Unit A
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