Datasheet Details
| Part number | STY16NA90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 47.60 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY16NA90_STMicroelectronics.pdf |
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Overview: ® STY16NA90 N - CHANNEL 900V - 0.5 Ω - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET PRELIMINARY DATA TYPE STY16NA90 s s V DSS 900 V R DS(on) < 0.54 Ω ID 16 A s s s s s s TYPICAL RDS(on) = 0.
| Part number | STY16NA90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 47.60 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY16NA90_STMicroelectronics.pdf |
|
|
|
T he Max247 package is a new high volume power package exibiting the same footprint as the industry standard TO -247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO -264.
The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating Factor T stg Tj St orage Temperature Max.
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