Datasheet Details
| Part number | STY15NA100 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 44.69 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY15NA100_STMicroelectronics.pdf |
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Overview: STY15NA100 N - CHANNEL 1000V - 0.65 Ω - 15A - Max247 MOSFET PRELIMINARY DATA TYPE STY15NA100 s s V DSS 1000 V R DS(on) < 0.77 Ω ID 15 A s s s s s s TYPICAL RDS(on) = 0.
| Part number | STY15NA100 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 44.69 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STY15NA100_STMicroelectronics.pdf |
|
|
|
The Max247 TM package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264.
The increased die capacity makes the device ideal to reduce component count in multiple paralleled designs and save board space with respect to larger packages.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES (UPS) ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max.
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