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N-CHANNEL 100V - 0.009 Ω - 140A MAX247™ MESH OVERLAY™ POWER MOSFET
TYPE STY140NS10
s s s
STY140NS10
VDSS 100V
RDS(on) <0.011Ω
ID 140A
TYPICAL RDS(on) = 0.009Ω STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STY140NS10 Datasheet
