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STY60NM60 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STY60NM60 N-CHANNEL 600V - 0.050Ω - 60A Max247 Zener-Protected MDmesh™Power MOSFET TYPE STY60NM60 VDSS 600V RDS(on) < 0.055Ω ID 60 A TYPICAL RDS(on) = 0.

General Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8 STY60NM60.

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