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STP9547 - P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STP9547
Manufacturer STANSON
File Size 371.30 KB
Description P-Channel Enhancement Mode MOSFET
Datasheet download datasheet STP9547 Datasheet
Additional preview pages of the STP9547 datasheet.

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STP9547 P Channel Enhancement Mode MOSFET - 6.8A DESCRIPTION The STP9547 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE z -40V/-5.6A, RDS(ON) = 55mΩ @VGS = -10V z -40V/-5.2A, RDS(ON) = 80mΩ @VGS = -4.
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