GD10PJK120F3S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness.They are designed for the applications such as general inverters and UPS.

Features

Low VCE(sat) NPT IGBT technology.
10μs short circuit capability.
Square RBSOA.
VCE(sat) with positive temperature coefficient.
Fast & soft reverse recovery anti-parallel FWD Typical.

STARPOWER

📥 Download Datasheet

Datasheet Details

Part number	GD10PJK120F3S
Manufacturer	STARPOWER
File Size	386.54 KB
Description	IGBT
Datasheet	GD10PJK120F3S Datasheet
Additional preview pages of the GD10PJK120F3S datasheet.

📁 Similar Datasheet

GD103SD - SWITCHING DIODE (GTM)
GD10HF60KD - short-circuit rugged IGBT (STMicroelectronics)
GD10MPS12A - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12E - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS12H - Silicon Carbide Schottky Diode (GeneSiC)
GD10MPS17H - Silicon Carbide Schottky Diode (GeneSiC)
GD10NC60HD - very fast IGBT (STMicroelectronics)
GD10NC60KD - short-circuit rugged IGBT (STMicroelectronics)
GD10NC60S - fast IGBT (STMicroelectronics)
GD14NC60K - IGBT (STMicroelectronics)

Other Datasheets by STARPOWER

Full PDF Text Transcription

Click to expand full text

GD10PJK120F3S STARPOWER SEMICONDUCTOR GD10PJK120F3S Molding Type Module 1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction and switching loss as well as short circuit ruggedness.They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) NPT IGBT technology  10μs short circuit capability  Square RBSOA  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply IGBT Module IGBT ©2013 STARPOWER Semiconductor Ltd. 1/15/2013 1/12 Rev.

Published: Jul 13, 2025 |