GD10PJY120L1S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features - Low VCE(sat) Trench IGBT technology - 10μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Fast & soft reverse recovery anti-parallel FWD - Isolated heatsink using DBC technology Typical Applications - Inverter for motor drive - AC and DC servo drive amplifier - Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2015 STARPOWER Semiconductor Ltd. 4/9/2015 1/9 Preliminary IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT-inverter Symbol VCES VGES ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25o C @ TC=100o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C Diode-inverter Symbol VRRM IF IFM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Diode Maximum Forward Current tp=1ms Diode-rectifier Symbol VRRM IO IFSM I2t Description Repetitive Peak Reverse Voltage Average Output Current 50Hz/60Hz,sine wave Surge Forward Current VR=0V,tp=10ms,Tj=45o C I2t-value,VR=0V,tp=10ms,Tj=45o...