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GD10PJY120L1S Datasheet IGBT

Manufacturer: STARPOWER

General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Overview

GD10PJY120L1S STARPOWER SEMICONDUCTOR GD10PJY120L1S 1200V/10A PIM in.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology Typical.