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GD10PJK120L2S - IGBT

Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Features

  • Low VCE(sat) NPT IGBT technology.
  • Low switching losses.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Al2O3 Substrate for low thermal resistance Typical.

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Datasheet preview – GD10PJK120L2S

Datasheet Details

Part number GD10PJK120L2S
Manufacturer STARPOWER
File Size 383.34 KB
Description IGBT
Datasheet download datasheet GD10PJK120L2S Datasheet
Additional preview pages of the GD10PJK120L2S datasheet.

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Full PDF Text Transcription

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GD10PJK120L2S STARPOWER SEMICONDUCTOR GD10PJK120L2S 1200V/10A PIM in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as general inverters and UPS. Features  Low VCE(sat) NPT IGBT technology  Low switching losses  10μs short circuit capability  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Al2O3 Substrate for low thermal resistance Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic IGBT Module IGBT ©2013 STARPOWER Semiconductor Ltd. 6/2/2013 1/12 Rev.
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