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GD10PJX65L2SF Datasheet IGBT

Manufacturer: STARPOWER

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General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as general inverters and UPS.

Overview

GD10PJX65L2SF STARPOWER SEMICONDUCTOR GD10PJX65L2SF 650V/10A PIM in.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 6μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Fast & soft reverse recovery anti-parallel FWD.
  • Isolated heatsink using DBC technology.
  • PressFIT contact technology Typical.

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