GD1400HFX170P2S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as wind power. Features - Low VCE(sat) Trench IGBT technology - 10μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Enlarged Diode for regenerative operation - Isolated copper baseplate using DBC technology - High power and thermal cycling capability Typical Applications - High Power Converter - Wind Power - Auxiliary Inverter Equivalent Circuit Schematic IGBT Module IGBT ©2020 STARPOWER Semiconductor Ltd. 8/25/2020 1/10 A01 IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT Symbol VCES VGES ICM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25o C @ TC=100o C Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C Value Unit ±20 2377 1400 8.98 k...