GD1400HFY120P2S Datasheet | STARPOWER

Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electric vehicle and solar power. Features - Low VCE(sat) Trench IGBT technology - 10μs short circuit capability - VCE(sat) with positive temperature coefficient - Maximum junction temperature 175o C - Low inductance case - Isolated copper baseplate using DBC technology - High power and thermal cycling capability Typical Applications - High Power Converter - Solar Power - Hybrid and Electric Vehicle Equivalent Circuit Schematic IGBT Module IGBT ©2025 STARPOWER Semiconductor Ltd. 6/10/2025 1/10 B01 IGBT Module Absolute Maximum Ratings TC=25o C unless otherwise noted IGBT Symbol VCES VGES ICRM PD Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25o C @ TC=100o C Repetitive Peak Collector Current tp=1ms Maximum Power Dissipation @ Tvj=175o C Diode Symbol VRRM IF IFRM Description Repetitive Peak Reverse Voltage Diode Continuous Forward Current Repetitive Peak Forward Current tp=1ms Module Symbol Tvjmax Tvjop TSTG VISO Description Maximum Junction Temperature Operating Junction Temperature Storage Temperature Range Isolation Voltage RMS,f=50Hz,t=1min...