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GD1400HFY120P2S Datasheet IGBT

Manufacturer: STARPOWER

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General Description

STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness.

They are designed for the applications such as electric vehicle and solar power.

Overview

GD1400HFY120P2S STARPOWER SEMICONDUCTOR GD1400HFY120P2S 1200V/1400A 2 in.

Key Features

  • Low VCE(sat) Trench IGBT technology.
  • 10μs short circuit capability.
  • VCE(sat) with positive temperature coefficient.
  • Maximum junction temperature 175oC.
  • Low inductance case.
  • Isolated copper baseplate using DBC technology.
  • High power and thermal cycling capability Typical.

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