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2N5401HR Datasheet PDF

STMicroelectronics 2N5401HR

The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Part No. 2N5401HR
Datasheet 2N5401HR Download
Manufacturer
STMicroelectronics
Description 150V 0.5A PNP transistor
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2N5401HR datasheet page 1 preview

FEATURES

Vceo 150 V IC(max.) 0.5 A HFE at 5 V, 10 mA > 60 Tj(max.) 200 °C
● Hermetic packages
● ESCC qualified
● 100 krad

DESCRIPTION

Qualified as per ESCC 5202/014 specification and available in LCC-3 and UB hermetic packages, they are specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence. Product summary Device 2N5401RUBx 2N5401UBx SOC5401RHRx SOC5401HRx Qualification system ESCC Flight ESCC Flight ESCC Flight ESCC Flight Agency specification 5202/014 5202/014 5202/014 5202/014 Note: See Table 7 for ordering information. Package UB UB LCC-3 LCC-3 Radiation level 100 krad - 100 krad - DS6656 - Rev 13 - February 2024 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings For PNP transistor voltage and current polarity is reversed.
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