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2N5401HR - 0.5A PNP transistor

General Description

The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).

Key Features

  • Vceo 150 V IC(max. ) 0.5 A HFE at 5 V, 10 mA > 60 Tj(max. ) 200 °C.
  • Hermetic packages.
  • ESCC qualified.
  • 100 krad.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N5401HR Datasheet Rad-Hard 150 V, 0.5 A PNP transistor 3 1 2 LCC-3 3 4 1 2 UB Pin 4 in UB is connected to the metallic lid. C (3) (2) B E (1) DS10460 Product status link 2N5401HR Features Vceo 150 V IC(max.) 0.5 A HFE at 5 V, 10 mA > 60 Tj(max.) 200 °C • Hermetic packages • ESCC qualified • 100 krad Description The 2N5401 and SOC5401 are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID). Qualified as per ESCC 5202/014 specification and available in LCC-3 and UB hermetic packages, they are specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.