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GB18N40LZ - Automotive-grade 390V internally clamped IGBT

General Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

Key Features

  • Designed for automotive.

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Full PDF Text Transcription for GB18N40LZ (Reference)

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ally clamped IGBT ESCIS 180 mJ Datasheet - production data 7$%   '3$. 7$%   'ð3$. Features • Designed for automotive applications and AEC-Q101 qualified • 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH • ESD gate-emitter protection • Gate-collector high voltage clamping • Logic level gate drive • Low saturation voltage • High pulsed current capability • Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Application • Pencil coil electronic ignition driver G (1) RG RGE Description This application-specific IGBT utilizes the most advanced PowerMESH™ technology.