STMicroelectronics GB18N40LZ
This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.| Part No. | GB18N40LZ |
|---|---|
| Datasheet | GB18N40LZ Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 390V internally clamped IGBT |
| Buy | Stock & Price |
FEATURES
● Designed for automotive applications and AEC-Q101 qualified● 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH
● ESD gate-emitter protection
● Gate-collector high voltage clamping
● Logic level gate drive
● Low saturation voltage
● High pulsed current capability
● Gate and gate-emitter resistor Figure 1. Internal schematic diagram C (2 or TAB) Application
● Pencil coil electronic ignition driver G (1) RG RGE
DESCRIPTION
The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition system. E (3) SC30180 Order codes STGB18N40
