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GB19NC60K - short circuit rugged IGBT

General Description

lebetween switching performance and low on-state sobehavior.

Figure 1.

lete Product(s) - ObTable 1.

Key Features

  • Low on-voltage drop (VCE(sat)).
  • Low Cres / Cies ratio (no cross conduction susceptibility).
  • Short circuit withstand time 10 µs.
  • IGBT co-packaged with ultra fast free-wheeling 3 2 3 1 diode ).

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Full PDF Text Transcription for GB19NC60K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for GB19NC60K. For precise diagrams, and layout, please refer to the original PDF.

STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ ...

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(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with ultra fast free-wheeling 3 2 3 1 diode )Applications t(s■ High frequency inverters uc■ Motor drivers rodDescription te PThis IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off lebetween switching performance and low on-state sobehavior. 1 TO-220 D2PAK Figure 1. Internal schematic diagram lete Product(s) - ObTable 1. Device summary soOrder codes Marking ObSTGB19NC60KT4 GB19NC60K Package D2PAK Packaging Tape and reel STGP19NC60K GP19NC60K TO-220 Tube May 2008 Rev 2 1/