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M29W008DB Description

6 Block Addresses (Top Boot Block) . 7 Block Addresses (Bottom Boot Block) . 9 Address Inputs (A0-A19).

M29W008DB Key Features

  • 2.7V to 3.6V for Program, Erase and Read ACCESS TIMES: 70ns, 90ns PROGRAMMING TIME: 10µs per Byte typical PROGRAM/ERASE
  • Embedded Byte Program Algorithm
  • Status Register bits and Ready/Busy Output 19 MEMORY BLOCKS
  • 1 Boot Block (Top or Bottom location)
  • 2 Parameter and 16 Main Blocks BLOCK, MULTI-BLOCK and CHIP ERASE MULTIPLE BLOCK PROTECTION/ TEMPORARY UNPROTECTION MODE
  • Standby and Automatic Standby modes 100,000 PROGRAM/ERASE CYCLES per BLOCK 20 YEARS DATA RETENTION
  • Defectivity below 1ppm/year ELECTRONIC SIGNATURE
  • Manufacturer Code: 20h
  • M29W008DT Device Code: D2h
  • M29W008DB Device Code: DCh