M58LR128HB Description
12 Data inputs/outputs (DQ0-DQ15) . 13 VPP Program supply voltage.
M58LR128HB Key Features
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 1.7 V to 2.0 V for I/O Buffers
- VPP = 9 V for fast program Synchronous / Asynchronous Read
- Synchronous Burst Read mode: 54 MHz
- Asynchronous Page Read mode
- Random access: 85 ns Synchronous Burst Read Suspend Programming time
- 2.5 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple Bank memory array: 8 Mbit banks
- Parameter Blocks (top or bottom location) Dual operations
- program/erase in one Bank while read in others