M58PR512LE Description
15 Data inputs/outputs (DQ0-DQ15) . 16 Deep power-down (DPD).
M58PR512LE Key Features
- VDD = 1.7 V to 2.0 V for program, erase and read
- VDDQ = 1.7 V to 2.0 V for I/O buffers
- VPP = 9 V for fast program Synchronous/asynchronous read
- Synchronous burst read mode: 108 MHz, 66 MHz
- Asynchronous page read mode
- Random access: 96 ns Programming time
- 4.2 µs typical word program time using Buffer Enhanced Factory Program mand Memory organization
- Multiple bank memory array: 32 Mbit banks (256 Mb devices) 64 Mbit banks (512 Mb devices) 128 Mbit banks (1 Gb devices)
- Four EFA (extended flash array) blocks of 64 Kbits Dual operations
- Program/erase in one bank while read in others