STMicroelectronics M58PR512LE
The M58PRxxxLE memories are only available as part of a multichip package device.| Part No. | M58PR512LE |
|---|---|
| Datasheet | M58PR512LE Download |
| Manufacturer |  STMicroelectronics |
| Description | Flash NOR / Mobile Terminal |
| Buy | Stock & Price |
FEATURES
● Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers – VPP = 9 V for fast program Synchronous/asynchronous read – Synchronous burst read mode: 108 MHz, 66 MHz – Asynchronous page read mode – Random access: 96 ns Programming time – 4.2 µs typical word program time using Buffer Enhanced Factory Program command Memory organization – Multiple bank memory array: 32 Mbit banks (256 Mb devices) 64 Mbit banks (512 Mb devices) 128 Mbit banks (1 Gb devices) – Four EFA (extended flash array) blocks of 64 Kbits Dual operations – Program/erase in one bank while read in others – No delay between read and write operations Block locking – All blocks locked at power-up – Any combination of blocks can be locked with zero latency – WP for block lock-down – Absolute Write protection with VPP = VSS● Wafer
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● Security – 64 bit unique device number – 2112 bit user programmable OTP cells CFI (common Flash interface) 100 000 program/erase cycl...
