P4NM60 Datasheet | STMicroelectronics

Features Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(s STD3NM60-1 650 < 1.5 Ω c STP4NM60 ID 3A 4A PW 42 W 69 W rodu- High dv/dt and avalanche capabilities te P- Improved ESD capability le- Low input capacitance and gate charge o- Low gate input resistance bs- Tight process control and high manufacturing Oyields t(s) -Applications c- Switching rodu Description PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well- known Power MESH™ horizontal layout structure. le The resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics. 3 2 1 TO-220 3 1 DPAK IPAK 2 1 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking Package Packing STD3NM60 D3NM60 DPAK Tape and reel STD3NM60-1 D3NM60 IPAK Tube STP4NM60 TO-2...