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SCT027TO65G3 Datasheet

Manufacturer: STMicroelectronics
SCT027TO65G3 datasheet preview

Datasheet Details

Part number SCT027TO65G3
Datasheet SCT027TO65G3-STMicroelectronics.pdf
File Size 1.49 MB
Manufacturer STMicroelectronics
Description 650V 60A Silicon carbide Power MOSFET
SCT027TO65G3 page 2 SCT027TO65G3 page 3

SCT027TO65G3 Overview

Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT027TO65G3 Key Features

  • Very fast and robust intrinsic body diode
  • Very low RDS(on) over the entire temperature range
  • High speed switching performances
  • Source sensing pin for increased efficiency
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