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SCT027TO65G3 - 650V 60A Silicon carbide Power MOSFET

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

Key Features

  • TO-LL Order code VDS SCT027TO65G3 650 V.
  • Very fast and robust intrinsic body diode.
  • Very low RDS(on) over the entire temperature range.
  • High speed switching performances.
  • Source sensing pin for increased efficiency RDS(on) typ. 29 mΩ ID 60 A Drain (TAB).

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SCT027TO65G3 Datasheet Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package Gate (1) Driver source (2) Features TO-LL Order code VDS SCT027TO65G3 650 V • Very fast and robust intrinsic body diode • Very low RDS(on) over the entire temperature range • High speed switching performances • Source sensing pin for increased efficiency RDS(on) typ. 29 mΩ ID 60 A Drain (TAB) Applications • AC-DC converters • DC-DC converters Description Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.