SCT027TO65G3 Description
Power source (3, 4, 5, 6, 7, 8) N-chG1DS2PS34567DTAB This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.
SCT027TO65G3 Key Features
- Very fast and robust intrinsic body diode
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Source sensing pin for increased efficiency