SCT027TO65G3
SCT027TO65G3 is 650V 60A Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Features
TO-LL
Order code
650 V
- Very fast and robust intrinsic body diode
- Very low RDS(on) over the entire temperature range
- High speed switching performances
- Source sensing pin for increased efficiency
RDS(on) typ. 29 mΩ
ID 60 A
Drain (TAB)
Applications
- AC-DC converters
- DC-DC converters
Description
Power source (3, 4, 5, 6, 7, 8)
N-ch G1DS2PS34567DTAB
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Product status link SCT027TO65G3
Product summary
Order code
Marking
027TO65G3
Package
TO-LL
Packing
Tape and reel
DS14846
- Rev 2
- January 2025 For further information, contact your local STMicroelectronics sales office.
.st.
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Drain-source voltage
Gate-source...
