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SCT027W65G3-4AG Datasheet

Manufacturer: STMicroelectronics

SCT027W65G3-4AG datasheet preview

Datasheet Details

Part number	SCT027W65G3-4AG
Datasheet	SCT027W65G3-4AG-STMicroelectronics.pdf
File Size	192.71 KB
Manufacturer	STMicroelectronics
Description	Automotive-grade silicon carbide Power MOSFET

SCT027W65G3-4AG Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology.

SCT027W65G3-4AG Key Features

AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Very high operating junction temperature capability (TJ = 200 °C)
Source sensing pin for increased efficiency

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SCT027W65G3-4AG Distributor