SCT027W65G3-4AG Datasheet | STMicroelectronics

Features Order code SCT027W65G3-4AG VDS 650 V RDS(on) typ. 29 mΩ ID 60 A Hi P247-4 2 34 1 Drain(1, TAB) - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Very high operating junction temperature capability (TJ = 200 °C) - Source sensing pin for increased efficiency Gate(4) Driver source(3) Applications Power source(2) ND1TPS2DS3G4 - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT027W65G3-4AG Product summary Order code SCT027W65G3-4AG Marking 27W65G34AG Package Hi P247-4 Packing Tube DS14380 - Rev 2 - August 2023 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum...