SCT060HU75G3AG Datasheet | STMicroelectronics

Automotive-grade silicon carbide Power MOSFET 750 V, 58 mΩ typ., 30 A in an HU3PAK package Gate (1) Driver source (2) 7 1 HU3PAK Drain (TAB) Power source (3, 4, 5, 6, 7) N-ch G1DS2PS34567DTAB Features Order code SCT060HU75G3AG VDS 750 V RDS(on) typ. 58 mΩ ID 30 A - AEC-Q101 qualified - Very low RDS(on) over the entire temperature range - High speed switching performances - Very fast and robust intrinsic body diode - Source sensing pin for increased efficiency Applications - Main inverter (electric traction) - DC/DC converter for EV/HEV - On board charger (OBC) Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation Si C MOSFET technology. The device Features a very low RDS(on) over the entire temperature range bined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction. Product status link SCT060HU75G3AG Product summary Order code Marking SCT06075G3AG Package HU3PAK Packing...