Datasheet Summary
Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 90 A in an H²PAK‑7 package
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-chG1DS2PS34567DTAB
Features
Order code
RDS(on) max.
1200 V
30 mΩ
90 A
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitance
- Source sensing pin for increased efficiency
Applications
- Switching mode power supply
- DC-DC converters
- Industrial motor control
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device Features...