Datasheet4U.com

SCTH70N120G2V-7 - Silicon carbide Power MOSFET

STMicroelectronics

📥 Download Datasheet

SCTH70N120G2V-7 silicon carbide power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	SCTH70N120G2V-7
Manufacturer	STMicroelectronics
File Size	373.17 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTH70N120G2V-7 Datasheet

General Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

The device

Overview

SCTH70N120G2V-7 Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ.

Key Features

Order code VDS RDS(on) max. ID SCTH70N120G2V-7 1200 V 30 mΩ 90 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Source sensing pin for increased efficiency.

More Datasheets from STMicroelectronics

Part Number	Description
SCTH100N120G2-AG	Automotive-grade silicon carbide Power MOSFET
SCTH100N65G2-7AG	Automotive-grade silicon carbide Power MOSFET
SCTH35N65G2V-7	Silicon carbide Power MOSFET
SCTH35N65G2V-7AG	Automotive-grade silicon carbide Power MOSFET
SCTH40N120G2V-7	Silicon carbide Power MOSFET
SCTH40N120G2V7AG	Automotive-grade silicon carbide Power MOSFET
SCTH60N120G2-7	Silicon carbide Power MOSFET
SCTH60N120G2-7AG	Automotive-grade silicon carbide Power MOSFET
SCTH90N65G2V-7	Silicon carbide Power MOSFET
SCTHC250N120G3AG	Automotive-grade silicon carbide Power MOSFET