SCTH90N65G2V-7
SCTH90N65G2V-7 is Silicon carbide Power MOSFET manufactured by STMicroelectronics.
Silicon carbide Power MOSFET 650 V, 116 A, 18 mΩ (typ., TJ = 25 °C) in an H²PAK‑7 package
7 1 H2PAK-7
Drain (TAB)
Gate (1) Driver source (2)
Power source (3, 4, 5, 6, 7)
N-ch G1DS2PS34567DTAB
Features
Order code
RDS(on) max.
650 V
24 mΩ
- Very high operating junction temperature capability (TJ = 175 °C)
- Very fast and robust intrinsic body diode
- Extremely low gate charge and input capacitances
ID 116 A
Applications
- Switching applications
- Power supply for renewable energy systems
- High frequency DC-DC converters
Description
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Si C MOSFET technology. The device Features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Product status link SCTH90N65G2V-7
Product summary
Order code
Marking
SCT90N65
Package
H2PAK-7
Packing
Tape and...
