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SCTH90N65G2V-7

Manufacturer: STMicroelectronics
SCTH90N65G2V-7 datasheet preview

Datasheet Details

Part number SCTH90N65G2V-7
Datasheet SCTH90N65G2V-7-STMicroelectronics.pdf
File Size 612.15 KB
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
SCTH90N65G2V-7 page 2 SCTH90N65G2V-7 page 3

SCTH90N65G2V-7 Overview

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTH90N65G2V-7 Key Features

  • Very high operating junction temperature capability (TJ = 175 °C)
  • Very fast and robust intrinsic body diode
  • Extremely low gate charge and input capacitances
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