STMicroelectronics SCTH90N65G2V-7
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance.SCTH90N65G2V-7 Specifications
- RDS(on) Max : 24mΩ
- Drain-Source Voltage : 650V
- Terminals : 7
- Max Power Dissipation : 484W
- Max Operating Temp : 175°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | SCTH90N65G2V-7 |
|---|---|
| Datasheet | SCTH90N65G2V-7 Download |
| Manufacturer |  STMicroelectronics |
| Description | Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. SCTH90N65G2V-7 650 V 24 mΩ● Very high operating junction temperature capability (TJ = 175 °C)
● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitances ID 116 A
APPLICATIONS
● Switching applications● Power supply for renewable energy systems
● High frequency DC-DC converters
DESCRIPTION
The variation of switching loss is almost independent of junction temperature. Product status link SCTH90N65G2V-7 Product summary Order code SCTH90N65G2V-7 Marking SCT90N65 Package H2PAK-7 Packing Tape and reel DS12084 - Rev 4 - July 2019 For further information contact your local STMicroelectronics sales office. SCTH90N65G2V-7 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
