STMicroelectronics SCTWA35N65G2V
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device AM01475v1_noZen features remarkably low on-resistance per unit area and very good switching performance.| Part No. | SCTWA35N65G2V |
|---|---|
| Datasheet | SCTWA35N65G2V Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 45A Silicon carbide Power MOSFET |
| Buy | Stock & Price |
FEATURES
HiP247 long leads D(2, TAB) G(1) Order code VDS RDS(on) max. ID SCTWA35N65G2V 650 V 67 mΩ 45 A● Very fast and robust intrinsic body diode
● Extremely low gate charge and input capacitance
● Very high operating junction temperature capability (TJ = 200 °C)
APPLICATIONS
● Switching mode power supply● DC-DC converters
● Industrial motor control
DESCRIPTION
S(3) The variation of switching loss is almost independent of junction temperature. Product status link SCTWA35N65G2V Product summary Order code SCTWA35N65G2V Marking 35N65G2V Package HiP247 long leads Packing Tube DS12081 - Rev 3 - October 2024 For further information contact your local STMicroelectronics sales office. SCTWA35N65G2V Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operating range) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) PTOT Drain current (pulsed) Total power dissipation at TC = 25 °C Tstg Storage temperature range TJ Operating junction temperature range 1.
