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STAC4932 - N-Channel MOSFET

Download the STAC4932 datasheet PDF. This datasheet also covers the STAC4932B variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The STAC4932B is an N-channel MOS field-effect RF power transistor.

It is intended for 100 V pulse applications up to 250 MHz.

This device is suitable for use in industrial, scientific and medical applications.

Key Features

  • Order code STAC4932B Frequency 123 MHz VDD 100 V POUT 1000 W Gain 24.6 dB Efficiency 60 %.
  • Excellent thermal stability.
  • Common source push-pull configuration.
  • POUT = 1000 W min. (1200 W typ. ) with 24.6 dB gain at 123 MHz.
  • Pulse conditions: 1ms, 10%.
  • In compliance with the 2002/95/EC European directive.
  • ST air-cavity STAC package technology.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STAC4932B-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STAC4932B Datasheet HF/VHF/UHF RF power N-channel MOSFET 1 1 2 3 3 STAC780-4B Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code STAC4932B Frequency 123 MHz VDD 100 V POUT 1000 W Gain 24.6 dB Efficiency 60 % • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10% • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.