STMicroelectronics STAC4932F
The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.| Part No. | STAC4932F |
|---|---|
| Datasheet | STAC4932F Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Order code STAC4932F Frequency 123 MHz VDD 100 V POUT 1000 W Gain 26 dB● Excellent thermal stability
● Common source push-pull configuration
● POUT = 1000 W min. (1200 W typ.) with 26 dB gain at 123 MHz
● Pulse conditions: 1ms, 10%
● In compliance with the 2002/95/EC European directive
● ST air-cavity STAC packaging technology Efficiency 60 %
DESCRIPTION
The STAC4932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC. Product status link STAC4932F Product summary Order code STAC4932F Marking STAC4932F Package STAC780-4F Packing Box Base / Bulk qty 20 / 80 DS6726 - Rev 4 - April 2020 For further information contact your local STMicroelectronics sales office. STAC4932F Electrical data 1 Electrical data 1.1 Maximum ratings 1.2 Table 1. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter Value Unit V(BR)DSS VDGR VGS TJ TSTG Drain source voltage (VGS = 0 V, TJ = 150 °C) Drain-gate voltage (RGS = 1 MΩ) Gate-source voltage Maximum operating junction temperature Storage temperature range 200 V 200 V ±20 V 200 °C -65 to +150 °C Thermal data Table 2.
