STAC4932F Datasheet | STMicroelectronics

Features Order code STAC4932F Frequency 123 MHz VDD 100 V POUT 1000 W Gain 26 d B - Excellent thermal stability - mon source push-pull configuration - POUT = 1000 W min. (1200 W typ.) with 26 d B gain at 123 MHz - Pulse conditions: 1ms, 10% - In pliance with the 2002/95/EC European directive - ST air-cavity STAC packaging technology Efficiency 60 % Description The STAC4932F is a N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932F benefits from the latest generation of efficient, patent-pending package technology, otherwise known as STAC. Product status link STAC4932F Product summary Order code Marking Package STAC780-4F Packing Box Base / Bulk qty 20 / 80 DS6726 - Rev 4 - April 2020 For further information contact your local STMicroelectronics sales office. .st. Electrical data Electrical data Maximum ratings Table 1. Absolute maximum ratings (TCASE = 25 °C) Symbol Parameter Value...