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STAC4932B - N-Channel MOSFET

General Description

The STAC4932B is an N-channel MOS field-effect RF power transistor.

It is intended for 100 V pulse applications up to 250 MHz.

This device is suitable for use in industrial, scientific and medical applications.

Key Features

  • Order code STAC4932B Frequency 123 MHz VDD 100 V POUT 1000 W Gain 24.6 dB Efficiency 60 %.
  • Excellent thermal stability.
  • Common source push-pull configuration.
  • POUT = 1000 W min. (1200 W typ. ) with 24.6 dB gain at 123 MHz.
  • Pulse conditions: 1ms, 10%.
  • In compliance with the 2002/95/EC European directive.
  • ST air-cavity STAC package technology.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STAC4932B Datasheet HF/VHF/UHF RF power N-channel MOSFET 1 1 2 3 3 STAC780-4B Pin connection Pin Connection 1 Drain 2 Source (bottom side) 3 Gate Features Order code STAC4932B Frequency 123 MHz VDD 100 V POUT 1000 W Gain 24.6 dB Efficiency 60 % • Excellent thermal stability • Common source push-pull configuration • POUT = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz • Pulse conditions: 1ms, 10% • In compliance with the 2002/95/EC European directive • ST air-cavity STAC package technology Description The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications.