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STB51N60DM6 - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Prerelease product(s) STB51N60DM6 Datasheet N-channel 600 V, 70 mΩ typ., 36 A, MDmesh DM6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications G(1) • Switching applications Description S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.