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STB51N60DM6 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: Prerelease product(s) STB51N60DM6 Datasheet N-channel 600 V, 70 mΩ typ.

General Description

S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Product status link STB51N60DM6 Product summary Order code STB51N60DM6 Marking 51N60DM6 Package D²PAK Packing Tape and reel DS14618 - Rev 1 - February 2024 For further information contact your local STMicroelectronics sales office.

Key Features

  • Order code VDS RDS(on) max. ID STB51N60DM6 600 V 80 mΩ 36 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

STB51N60DM6 Distributor