STB51N60DM6 Datasheet | STMicroelectronics

Prerelease product(s) N-channel 600 V, 70 mΩ typ., 36 A, MDmesh DM6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code RDS(on) max. 600 V 80 mΩ 36 A - Fast-recovery body diode - Lower RDS(on) per area vs previous generation - Low gate charge, input capacitance and resistance - 100% avalanche tested - Extremely high dv/dt ruggedness - Zener-protected Applications G(1) - Switching applications Description S(3) AM01476v1_tab This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB51N60DM6 Product summary Order code Marking 51N60DM6 Package...