Datasheet Details
| Part number | STB8NS25 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 362.37 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STB8NS25_STMicroelectronics.pdf |
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Overview: N-CHANNEL 250V - 0.38Ω - 8A D2PAK MESH OVERLAY™ MOSFET TYPE STB8NS25 s s s STB8NS25 VDSS 250 V RDS(on) < 0.45 Ω ID 8A TYPICAL RDS(on) = 0.
| Part number | STB8NS25 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 362.37 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STB8NS25_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.
The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT D2PAK INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID (*) ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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