STB95N4F3 Description
These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. Internal schematic diagram $ 4!" OR ' Table 1. 20 Contents Contents STB95N4F3, STD95N4F3, STP95N4F3 1 Electrical ratin.
STB95N4F3 Key Features
- Standard threshold drive
- 100% avalanche tested