STD10P10F6 Datasheet | STMicroelectronics

P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code -100 V - Very low on-resistance - Very low gate charge - High avalanche ruggedness - Low gate drive power loss RDS(on) max. 0.18 Ω ID -10 A Applications - Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages. Product status link STD10P10F6 Product summary Order code Marking 10P10F6 Package DPAK Packing Tape and...