STMicroelectronics STD10P10F6
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.| Part No. | STD10P10F6 |
|---|---|
| Datasheet | STD10P10F6 Download |
| Manufacturer |  STMicroelectronics |
| Description | P-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS STD10P10F6 -100 V● Very low on-resistance
● Very low gate charge
● High avalanche ruggedness
● Low gate drive power loss RDS(on) max. 0.18 Ω ID -10 A
APPLICATIONS
● Switching applicationsDESCRIPTION
Product status link STD10P10F6 Product summary Order code STD10P10F6 Marking 10P10F6 Package DPAK Packing Tape and reel DS10343 - Rev 3 - April 2022 For further information contact your local STMicroelectronics sales office. 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM (1) Drain current (pulsed) PTOT Total power dissipation at TC=25 °C Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter RthJC Thermal resistance, junction-to-case RthJB (1) Thermal resistance, junction-to-board 1. When mounted on FR-4 board of 1inch², 2oz Cu t < 10 s.
