STMicroelectronics STD134N4F7AG
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.FEATURES
Order code VDS STD134N4F7AG 40 V RDS(on) max. 3.5 mΩ ID PTOT 80 A 134 W Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3)● AEC-Q101 qualified
● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD134N4F7AG AM01475v1_Tab Table 1: Device summary Marking Package 134N4F7 DPAK Packing Tape and reel December 2016 DocID030109 Rev 1 This is information on a product in full production. 1/16 Contents Conten