Description
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
Features
- Order code
VDS
STD134N4F7AG 40 V
RDS(on) max. 3.5 mΩ
ID PTOT 80 A 134 W
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3).
- AEC-Q101 qualified.
- Among the lowest RDS(on) on the market.
- Excellent FoM (figure of merit).
- Low Crss/Ciss ratio for EMI immunity.
- High avalanche ruggedness.
STD134N4F7AG Datasheet
