STMicroelectronics STD170N4F7AG
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.| Part No. | STD170N4F7AG |
|---|---|
| Datasheet | STD170N4F7AG Download |
| Manufacturer |  STMicroelectronics |
| Description | N-channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID PTOT STD170N4F7AG 40 V 2.8 mΩ 80 A 172 W● AEC-Q101 qualified
● Among the lowest RDS(on) on the market
● Excellent FoM (figure of merit)
● Low Crss/Ciss ratio for EMI immunity
● High avalanche ruggedness
APPLICATIONS
● Switching applicationsDESCRIPTION
Order code STD170N4F7AG AM01475v1_no Tab_noZen Table 1: Device summary Marking Package 170N4F7 DPAK Packing Tape and reel December 2016 DocID030120 Rev 1 This is information on a product in full production. 1/16 Contents Conte
