STD170N4F7AG Datasheet | STMicroelectronics

Automotive-grade N-channel 40 V, 2.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package - production data Figure 1: Internal schematic diagram D(2) G(1) S(3) Features Order code VDS RDS(on) max. ID PTOT STD170N4F7AG 40 V 2.8 mΩ 80 A 172 W - AEC-Q101 qualified - Among the lowest RDS(on) on the market - Excellent FoM (figure of merit) - Low Crss/Ciss ratio for EMI immunity - High avalanche ruggedness Applications - Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for...