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STD170N4F7AG - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Order code VDS RDS(on) max. ID PTOT STD170N4F7AG 40 V 2.8 mΩ 80 A 172 W.
  • AEC-Q101 qualified.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD170N4F7AG Automotive-grade N-channel 40 V, 2.2 mΩ typ., 80 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data Figure 1: Internal schematic diagram D(2) G(1) S(3) Features Order code VDS RDS(on) max. ID PTOT STD170N4F7AG 40 V 2.8 mΩ 80 A 172 W  AEC-Q101 qualified  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.