Datasheet4U Logo Datasheet4U.com

STD3NM60-1 - N-CHANNEL MOSFET

Download the STD3NM60-1 datasheet PDF. This datasheet also covers the STD3NM60 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

known PowerMESH™ horizontal layout structure.

leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics.

Key Features

  • Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu.
  • High dv/dt and avalanche capabilities te P.
  • Improved ESD capability le.
  • Low input capacitance and gate charge o.
  • Low gate input resistance bs.
  • Tight process control and high manufacturing Oyields t(s) -.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD3NM60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STD3NM60N N-Channel MOSFET INCHANGE
STD3NK100Z N-Channel MOSFET Transistor Inchange Semiconductor
STD3NK50Z N-CHANNEL SuperMESH MOSFET ST Microelectronics
STD3NK50Z-1 N-Channel MOSFET ST Microelectronics
STD3NK50ZT4 N-Channel MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD3NM60 N-CHANNEL MOSFET
STD3NM60N N-channel Power MOSFET
STD3NM50 N-CHANNEL MOSFET
STD3NM50-1 N-CHANNEL MOSFET
STD3N25 N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET Features Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu■ High dv/dt and avalanche capabilities te P■ Improved ESD capability le■ Low input capacitance and gate charge o■ Low gate input resistance bs■ Tight process control and high manufacturing Oyields t(s) -Applications c■ Switching roduDescription PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure. leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics. 3 2 1 TO-220 3 1 DPAK IPAK 3 2 1 Figure 1.