STD5NM60T4 Datasheet | STMicroelectronics

N-channel 600 V, 0.9 Ω typ., 5 A MDmesh Power MOSFET in a DPAK package Features 23 1 DPAK D(2, TAB) Order code RDS(on) max. 600 V 1.0 Ω 5A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications G(1) Description S(3) This N-channel Power MOSFET is developed using STMicroelectronics' revolutionary MDmesh technology, which associates the multiple drain process with AM01475v1_noZen the pany's PowerMESH horizontal layout. This device offers extremely low on- resistance, high dv/dt, and excellent avalanche characteristics. Using STMicroelectronics's...