Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
Features
- Type
VDSS
RDS(on) max
ID
Pw
STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3
620 V
< 0.75 Ω
8.4 A(1) 8.4 A
30 W 125 W
1. Limited by package.
- 100% avalanche tested.
- Extremely high dv/dt capability.
- Gate charge minimized.
- Very low intrinsic capacitances.
- Improved diode reverse recovery
characteristics.
- Zener-protected.
STF10N62K3 Datasheet
