Datasheet4U Logo Datasheet4U.com

STF10N62K3 - N-channel Power MOSFET

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Key Features

  • Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitances.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF10NM60N N-Channel Power MOSFET ST Microelectronics
STF10NM60ND N-Channel MOSFET INCHANGE
STF10NM65N N-Channel MOSFET INCHANGE
STF100N10F7 N-Channel MOSFET INCHANGE
STF100N6F7 N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STF10N60DM2 N-CHANNEL POWER MOSFET
STF10N60M2 N-channel Power MOSFET
STF10N65K3 N-channel Power MOSFET
STF10N105K5 N-channel Power MOSFET
STF10N80K5 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF10N62K3, STFI10N62K3, STI10N62K3, STP10N62K3 N-channel 620 V, 0.68 Ω typ., 8.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220 packages Datasheet − production data Features Type VDSS RDS(on) max ID Pw STF10N62K3 STFI10N62K3 STI10N62K3 STP10N62K3 620 V < 0.75 Ω 8.4 A(1) 8.4 A 30 W 125 W 1. Limited by package ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved diode reverse recovery characteristics ■ Zener-protected Applications ■ Switching applications Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.