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STF10N80K5 - N-CHANNEL POWER MOSFET

General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS STF10N80K5 800 V RDS(on) max 0.600 Ω ID PTOT 9 A 30 W 3 2 1 TO-220FP Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1.
  • Industry’s best RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF10N80K5 N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS STF10N80K5 800 V RDS(on) max 0.600 Ω ID PTOT 9 A 30 W 3 2 1 TO-220FP Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 • Industry’s best RDS(on) • Industry’s best figure of merit (FoM) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STF10N80K5 Table 1.