STF10N80K5 Datasheet | STMicroelectronics

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package - production data Features Order code VDS STF10N80K5 800 V RDS(on) max 0.600 Ω ID PTOT 9 A 30 W 3 2 1 TO-220FP Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 - Industry’s best RDS(on) - Industry’s best figure of merit (FoM) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in onresistance and ultra-low gate charge for applications...