STMicroelectronics STF10N80K5
The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.| Part No. | STF10N80K5 |
|---|---|
| Datasheet | STF10N80K5 Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel 800V 9A Power MOSFET |
| Buy | Stock & Price |
FEATURES
Order code VDS RDS(on) max. ID STF10N80K5 800 V 600 mΩ 9A STFU10N80K5● Ultra-low gate charge
● Very low FoM (figure of merit)
● Zener-protected
● 100% avalanche tested
APPLICATIONS
● Switching applicationsDESCRIPTION
These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. Product status links STF10N80K5 STFU10N80K5 Product summary Order code STF10N80K5 Marking 10N80K5 Package TO-220FP Packing Tube Order code STFU10N80K5 Marking 10N80K5 Package TO-220FP ultra narrow leads Packing Tube DS10410 - Rev 6 - April 2026 For further information, contact your local STMicroelectronics sales office. STF10N80K5, STFU10N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipatio...
